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D45H11G

Manufacturer:

On Semiconductor

Mfr.Part #:

D45H11G

Datasheet:
Description:

BJTs TO-220-3 Through Hole PNP 2 W Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):80 V Emitter Base Voltage (VEBO):5 V

ParameterValue
Voltage Rating (DC)-80 V
Length10.28 mm
Width4.82 mm
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins3
Height9.28 mm
PackagingTube
Radiation HardeningNo
RoHSCompliant
PolarityPNP
REACH SVHCNo SVHC
Contact PlatingTin
Frequency40 MHz
Number of Elements1
Current Rating-10 A
Lifecycle StatusProduction (Last Updated: 2 months ago)
Max Power Dissipation2 W
Power Dissipation2 W
Max Collector Current10 A
Collector Emitter Breakdown Voltage80 V
Transition Frequency40 MHz
Element ConfigurationSingle
Max Frequency40 MHz
Collector Emitter Voltage (VCEO)80 V
Gain Bandwidth Product40 MHz
Collector Base Voltage (VCBO)80 V
Collector Emitter Saturation Voltage1 V
Emitter Base Voltage (VEBO)5 V
hFE Min60
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 months ago)
Max Cutoff Collector Current10 µA
Transistor TypePNP

Stock: 1714

Distributors
pcbx
Unit Price$0.59683
Ext.Price$0.59683
QtyUnit PriceExt.Price
1$0.59683$0.59683
10$0.48326$4.83260
25$0.45437$11.35925
50$0.42720$21.36000
100$0.37500$37.50000
300$0.35777$107.33100
500$0.34134$170.67000
1000$0.32456$324.56000